SG01D-BC18ISO90 SiC UVB+UVC Photodiode
The SG01D-BC18ISO90 is a SiC UVB+UVC photodiode that provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors.
The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coefficient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate signal transducer (see
typical circuit on page 3 of the data sheet).
- UVB+UVC
- 0.50 mm2 detector area
- TO18 hermetically sealed metal housing, two isolated pins, one additional grounded pin
- 10 µW/cm2 irradiation at 280 nm (peak responsivity) results in a current of approx. 8 nA
- SiC chip with PTB reported high radiation hardness