SG03R10-5 Broadband SiC based UV photodiode with VUV responsivity
The difference between the sglux standard SG01 series and the SG03 series is the production method of the pn junction. The standard SG01 series works with vapor phase epitaxy generated pn junction. The SG03 series uses an ion implantation process. This process allows to position the depletion zone closer to the chip surface which leads to
an improved spectral responsivity for wavelengths lower than 200nm. Accordingly, the SG03-series SiC photodiodes can be applied for measurement of 185nm UV radiation used for grease and odor reduction in canteen kitchens, TOC (total organic carbon) reduction (water treatment). Also UV irradiance generated by 172nm excimer sources as
used for UV curing and matting of coatings can be detected. The photodiodes are available with five different active chip areas from 0.1 mm 2 up to 8 mm 2 . By default, the photodiode is sensitive from VUV to UVA. Photodiodes with customized optical filters (e.g. 185nm Hg low pressure lamp measurement while being blind for 254nm) are available on request. Please contact us for detail
- UV broadband + VUV responsivity (UVA+UVB+UVC)
- 1.0 mm² detector area
- flat TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
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10µW/cm² irradiation at 280nm (peak responsivity) results a current of approx. 16 nA
- wide FOV